High-uniformity 2 × 64 silicon avalanche photodiode arrays with silicon multiple epitaxy technology

In this paper, high-uniformity 2×64 silicon avalanche photodiode (APD) arrays are reported. Silicon multiple epitaxy technology was used, and the high performance APD based on double-layer epiwafers achieved for first time, to best of our knowledge. A breakdown voltage with a fluctuation smaller than 3.5 V is obtained fabricated arrays. The dark currents below 90 pA all 128 pixels at unity gain voltage. in show factor larger 300 peak responsivity 0.53 A/W@M = 1 850 nm (corresponding maximum external quantum efficiency 81%) room temperature. Quick optical pulse response time measured, corresponding cutoff frequency up 100 MHz obtained.